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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

Name: Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply
Brand: Uchi
Price: 1 USD

Wholesale Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply from china suppliers

Brand Name : Uchi

Model Number : Schottky diodes

Certification : CE / RoHS / ISO9001 / UL

Place of Origin : Dongguan China

MOQ : Negotiation

Price : Negotiation

Payment Terms : T/T

Supply Ability : 2000000 per month

Delivery Time : Negotiation

Packaging Details : Export package / Negotiation

Type : Schottky Diode

Features : Common cathode structure

Material : Silicon

Max. Forward Current : 30A, 30A

Max. Forward Voltage : 0.9V, 0.9V

Max. Reverse Voltage : 200V

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Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply

MBR10100.pdf

The Schottky diode is named after its inventor, Dr. Schottky (Schottky), and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but by using the principle of metal-semiconductor junction formed by contacting metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a kind of hot carrier diode.

Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

PRODUCT MESSAGE

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device per diode	IF(AV)	10 5	A
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C

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